Wafer-level light emitting diode (WL-LED): An innovative approach for cost-effective very high power lighting

机译：晶圆级发光二极管（WL-LED）：一种经济高效的超高功率照明的创新方法

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A very high power wafer level light emitting diode (WL-LED) has been successfully fabricated on 2 inches InGaN/GaN epi-wafer based on high voltage design. The maximum light output power (LOP) was measured to be 157W with an external quantum efficiency (EQE) of 24%.

机译：基于高压设计，已经成功地在2英寸InGaN / GaN外延晶片上制造了非常高功率的晶片级发光二极管（WL-LED）。测量的最大光输出功率（LOP）为157W，外部量子效率（EQE）为24％。

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《China international forum on solid state lighting》|2014年|137-140|共4页
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Cai Y.; Zhang Y.B.; Xu F.; Zhao D.S.; Huang H.J.; Wang W.; Xu J.W.; Shi G.Y.; Zhang B.S.;
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1. Wafer-Level Light Emitting Diode (WL-LED) Chip Simplified Package for Very-High Power Solid-State Lighting (SSL) Source [J] . Zhang Yibin, Xu Jianwei, Ding Mingdi, Electron Device Letters, IEEE . 2016,第2期

机译：晶圆级发光二极管（WL-LED）芯片简化封装，用于超高功率固态照明（SSL）源
2. Chip implementation of high-efficient light-emitting diode dimming driver for high-power light-emitting diode lighting system [J] . Shih-Chang Hsia, Ming-Hwa Sheu, Sheng-Yueh Lai Power Electronics, IET . 2015,第6期

机译：大功率发光二极管照明系统的高效发光二极管调光驱动器的芯片实现
3. Innovative Fabrication of Wafer-Level InGaN-Based Thin-Film Flip-Chip Light-Emitting Diodes [J] . Chiang Yen-Chih, Lin Bing-Cheng, Chen Kuo-Ju, Photonics Technology Letters, IEEE . 2015,第13期

机译：晶圆级InGaN基薄膜倒装芯片发光二极管的创新制造
4. Wafer-level light emitting diode (WL-LED): An innovative approach for cost-effective very high power lighting [C] . Cai Y., Zhang Y.B., Xu F., China international forum on solid state lighting . 2014

机译：晶圆级发光二极管（WL-LED）：一种具有成本效益非常高功率照明的创新方法
5. Development of High-Power III-Nitride Light-Emitting Diodes for Solid-State Lighting [D] . Yang, Yi. 2011

机译：用于固态照明的高功率III族氮化物发光二极管的研制
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8. Promise of Solid State Lighting for General Illumination: Light Emitting Diodes(LED's) and Organic Light Emitting Diodes (OLED's) [R] . 2001

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Wafer-level light emitting diode (WL-LED): An innovative approach for cost-effective very high power lighting

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