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Investigation of PZT/Si Wafer Micro Milling using Diamond Coated Tool

机译:使用金刚石涂层刀具的PZT / Si晶片微铣削的研究

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The cutting performance of the PZT/Si wafer micro milling was investigated by using the diamond coated micro end mill. At the same time, the cutting force and AE signals collected during cutting were also investigated to identify their capability of monitoring the surface condition and ductile/brittle cutting mode. To analyze the cutting performance of PZT thin film and corresponding signals, an experiment was conducted on a micro-machining equipment with resolution of 1 um. The PZT thin film with thickness of around 1 um was deposited on the Si wafer by a Sol-Gel method. During cutting, the AE signal was collected by an AE sensor clamped on the top of wafer, and the cutting force was collected by a Kistler 9256C dynamometer installed under a vacuum chuck. After the cutting, the finished surface was investigated by a white light interferometer system, and the chip was also investigated by a scanning electronic microscopic (SEM). The results show that the while light interferometer can be used to identify the cracked spot on the bottom of the machined surface. For the cutting mode analysis, the ductile mode cutting cannot be reached for the PZT thin film machining in this study. However, it can be obtained for Si wafer at the same cutting condition. Moreover, the RMS cutting force for PZT machining is higher than the Si wafer machining and its surface finish is not as good as in cutting the pure Si wafer. In analyzing the collected AE and cutting force signals, the AE signal, the time domain cutting force signals, and the RMS cutting force signals demonstrate their high correlation with the ductile/brittle cutting mode and surface condition.
机译:通过使用金刚石涂层的微型立铣刀研究了PZT / Si晶片微型铣削的切削性能。同时,还研究了切削过程中收集到的切削力和AE信号,以确定它们监测表面状况和韧性/脆性切削模式的能力。为了分析PZT薄膜的切割性能和相应的信号,在分辨率为1 um的微加工设备上进行了实验。通过Sol-Gel法将厚度约为1μm的PZT薄膜沉积在Si晶片上。在切割过程中,AE信号由夹在晶片顶部的AE传感器收集,切割力由安装在真空吸盘下的Kistler 9256C测力计收集。切割后,通过白光干涉仪系统对完成的表面进行研究,并且还通过扫描电子显微镜(SEM)对芯片进行研究。结果表明,白光干涉仪可用于识别加工表面底部的裂纹点。对于切割模式分析,在这项研究中无法达到PZT薄膜加工的延性模式切割。然而,对于相同切割条件的硅晶片而言,可以获得这种效果。此外,用于PZT加工的RMS切削力要高于硅片加工,其表面光洁度不如切割纯硅片时好。在分析收集的AE和切削力信号时,AE信号,时域切削力信号和RMS切削力信号显示出它们与延性/脆性切削模式和表面状况的高度相关性。

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