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Studying Operational Models of Relaxed Concurrency

机译:研究松弛并发的操作模型

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We study two operational semantics for relaxed memory models. Our first formalization is based on the notion of write-buffers which is pervasive in the memory models literature. We instantiate the (Total Store Ordering) TSO and (Partial Store Ordering) PSO memory models in this framework. Memory models that support more aggressive relaxations (e.g. read-to-read reordering) are not easily described with write-buffers. Our second framework is based on a general notion of speculative computation. In particular we allow the prediction of function arguments, and execution ahead of time (e.g. by branch prediction). While technically more involved than write-buffers, this model is more expressive and can encode all the Sparc family of memory models: TSO, PSO and (Relaxed Memory Ordering) RMO. We validate the adequacy of our instantiations of TSO and PSO by formally comparing their write-buffer and speculative formalizations. The use of operational semantics techniques is paramount for the tractability of these proofs.
机译:我们研究了松弛内存模型的两种操作语义。我们的第一个形式化是基于在存储模型文献中普遍存在的写缓冲区的概念。我们在此框架中实例化了(总商店订购)TSO和(部分商店订购)PSO内存模型。使用写缓冲区不容易描述支持更积极的放松(例如,读取到读取的重新排序)的内存模型。我们的第二个框架基于推测计算的一般概念。特别是,我们允许预测函数自变量,并提前执行(例如通过分支预测)。尽管从技术上讲,它比写缓冲区要复杂得多,但该模型更具表现力,并且可以对所有Sparc系列存储器模型进行编码:TSO,PSO和(轻松存储器排序)RMO。通过正式比较它们的写缓冲区和推测形式,我们验证了TSO和PSO实例化的适当性。操作语义技术的使用对于这些证明的易处理性至关重要。

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