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Anti-reflection coatings for submillimeter silicon lenses

机译:亚毫米硅镜片的防反射涂层

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Low-loss lenses are required for submillimeter astronomical applications, such as instrumentation for CCAT, a 25 m diameter telescope to be built at an elevation of 18,400 ft in Chile. Silicon is a leading candidate for dielectric lenses due to its low transmission loss and high index of refraction; however, the latter can lead to large reflection losses. Additionally, large diameter lenses (up to 40 cm), with substantial curvature present a challenge for fabrication of anti-reflection coatings. Three anti-reflection coatings are considered: a deposited dielectric coating of Parylene C, fine mesh structures cut with a dicing saw, and thin etched silicon layers (fabricated with deep reactive ion etching) for bonding to lenses. Modeling, laboratory measurements, and practicalities of fabrication for the three coatings are presented and compared. Measurements of the Parylene C anti-reflection coating were found to be consistent with previous studies and can be expected to result in a 6% transmission loss for each interface from 0.787 to 0.908 THz. The thin etched silicon layers and fine mesh structure anti-reflection coatings were designed and fabricated on test silicon wafers and found to have reflection losses less than 1% at each interface from 0.787 to 0.908 THz. The thin etched silicon layers are our preferred method because of high transmission efficiency while having an intrinsically faster fabrication time than fine structures cut with dicing saws, though much work remains to adapt the etched approach to curved surfaces and optics > 4" in diameter unlike the diced coatings.
机译:亚毫米天文应用需要低损耗透镜,例如用于CCAT的仪器,CCAT的仪器是直径为25 m的望远镜,将在智利海拔18,400 ft处建造。硅由于其低的传输损耗和高的折射率而成为介电透镜的主要候选材料。但是,后者会导致较大的反射损耗。另外,具有较大曲率的大直径透镜(最大40 cm)对防反射涂层的制造提出了挑战。考虑了三种抗反射涂层:聚对二甲苯C的沉积电介质涂层,用划片机切割的精细网状结构以及用于与透镜粘合的薄蚀刻硅层(通过深反应离子蚀刻制成)。介绍并比较了三种涂层的建模,实验室测量和制造实用性。发现Parylene C抗反射涂层的测量与先前的研究一致,并且可以预期在0.787至0.908 THz的范围内每个界面的透射损耗为6%。在测试硅晶片上设计和制造了薄蚀刻的硅层和精细的网状结构减反射涂层,发现在0.787至0.908 THz的每个界面上反射损失均小于1%。薄蚀刻的硅层是我们的首选方法,因为高传输效率同时具有比用划片机切割的精细结构本质上更快的制造时间,尽管仍需要大量工作来使蚀刻方法适应曲面和直径大于4“的光学元件,丁涂层。

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