首页> 外文会议>Conference on high energy, optical, and infrared detectors for astronomy >Assessment of the Performance and Radiation Damage Effects under Cryogenic Temperatures of P-channel CCD204s
【24h】

Assessment of the Performance and Radiation Damage Effects under Cryogenic Temperatures of P-channel CCD204s

机译:低温下P通道CCD204s的性能和辐射损伤效应的评估

获取原文

摘要

CCDs continue to be the detector of choice for high resolution and high performance space applications. One perceived drawback is their susceptibility to radiation damage, in particular the formation of trap sites leading to a decrease in charge transfer efficiency. To that end, ESA has started a programme to investigate a new generation of devices based upon p-channel technology. The expectation is that once mature, p-channel devices may offer a significant increase in tolerance to proton radiation over traditional n-type buried channel CCDs. Early studies of e2v devices to assess the radiation hardness of p-channel devices were limited by the quality of devices available, however more recently, good quality p-channel CCD204s have been manufactured and studied. A more detailed evaluation of p-channel CCDs is now underway to realise the full potential of the technology for use in future high radiation environment space missions. A key aspect is the development of a cryogenic test rig that will allow for the first time a direct comparison of the radiation damage effects when the irradiation is performed both traditionally unbiased at room temperature and cryogenically with the device operational. Subsequent characterisations will also be performed on the cryogenic device after periods of storage at room temperature to investigate the potential annealing effects upon the lattice damage. Here we describe and present early results from an extensive programme of testing which will address all key performance parameters for p-channel CCDs, such as full electro-optical characterisation, assessment of radiation hardness and investigation of trap species.
机译:CCD仍然是高分辨率和高性能空间应用的首选探测器。一个可察觉的缺点是它们易受辐射损坏,特别是形成陷阱位点,导致电荷转移效率降低。为此,ESA已启动一项程序,以研究基于p通道技术的新一代设备。期望的是,一旦成熟,p通道器件可能会比传统的n型掩埋通道CCD显着提高对质子辐射的耐受性。早期e2v器件评估p通道器件的辐射硬度的研究受到可用器件质量的限制,但是最近,已经制造并研究了高质量的p通道CCD204。目前正在对p通道CCD进行更详细的评估,以实现该技术在未来高辐射环境太空飞行中使用的全部潜力。一个关键方面是开发低温测试设备,这将首次允许对传统上在室温下无偏和在设备可操作地低温下进行辐照时辐射损害效果进行直接比较。在室温下保存一段时间后,还将在低温装置上进行后续表征,以研究对晶格损伤的潜在退火效应。在这里,我们描述并介绍了广泛测试程序的早期结果,这些程序将解决p通道CCD的所有关键性能参数,例如完整的电光特性,辐射硬度评估和陷阱种类调查。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号