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Terahertz Magnetospectroscopy of a Point Contact Based on CdTe/CdMgTe Quantum Well

机译:基于CdTe / CdMgTe量子阱的点接触的太赫兹电磁波谱

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THz response of a number of samples based on CdTe/CdMgTe quantum wells grown by a molecular beam epitaxy was investigated at low temperatures and high magnetic fields. The experiments involved magnetotransport, photocurrent, and transmission measurements carried out with a monochromatic THz sources or a Fourier spectrometer. Samples of different geometry, with and without a gate metallization were used. We observed excitations of a two-dimensional plasma in the form of optically-induced Shubnikov-de Haas oscillations, cyclotron resonance transitions and magnetoplasmon resonances. A polaron effect was observed at magnetic fields higher than 10 T. A point contact device processed with an electron beam lithography was investigated as a detector of THz radiation. It was shown that the main mechanism responsible for a THz performance of the point contact was excitation of magnetoplasmons with a wave vector defined by geometrical constrictions of the device mesa.
机译:在低温和高磁场下研究了许多基于分子束外延生长的CdTe / CdMgTe量子阱的样品的THz响应。实验涉及利用单色太赫兹源或傅立叶光谱仪进行的磁传输,光电流和传输测量。使用具有和不具有栅极金属化的不同几何形状的样品。我们观察到以光致Shubnikov-de Haas振荡,回旋加速器共振转变和磁等离子体共振的形式激发二维等离子体。在高于10 T的磁场中观察到极化子效应。研究了用电子束光刻处理的点接触装置作为THz辐射的检测器。结果表明,负责点接触的太赫兹性能的主要机制是利用由装置台面的几何收缩定义的波矢激发磁等离子体激元。

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