New non-destructive Read/Write circuit for Memristor-based memories

摘要

The recently found Memristor is a potential candidate for the next-generation memory because of its nano-scale and non-volatile advantages. In this paper, a new Read/Write circuit design is proposed based on the Memristor as a memory element. The proposed circuit exhibits low power consumption, short delay time, and occupying less layout area. In addition, the proposed circuit has the advantage of non-destructive successive reading cycles capability.