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Analysis and improvement of Si integrated on-chip dipole antennas using high-k dielectric materials for ultra wideband signal transmission

机译:使用高k介电材料的Si集成片上偶极子天线的分析和改进,用于超宽带信号传输

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In this paper, a linear on-chip dipole antenna pair on Si substrate is analyzed and simulated to investigate the transmission characteristics using CST MICROWAVE STUDIO. By inserting a 1.4 mm thick diamond layer between substrate and heat sink, the obtained transmission gain of antenna pair of length 4mm with 3mm separation on 10 Ohm-cm Si substrate increases by 12dB at 14GHz and for 1.5mm thick beryllia layer transmission gain increases 12 dB at 14.5 GHz. The effect of the dielectric materials like diamond, AlN, Alumina, beryllia, Taconic CER-10 and Arlon AR 1000thickness, substrate resistivity and the separation of an antenna pair on the transmission gain has been investigated. The results indicate that for highly dielectric materials of low electrical conductivity but high thermal conductivity, the transmission gain increases in real interconnection systems.
机译:本文对硅衬底上的线性片上偶极天线对进行了分析和仿真,以研究使用CST微波工作室的传输特性。通过在基板和散热片之间插入1.4 mm厚的金刚石层,在14 GHz时在10 Ohm-cm Si基板上获得的3mm间隔的4mm长的天线对的传输增益增加12dB,而对于1.5mm厚的铍层,传输增益增加12在14.5 GHz时为dB。研究了介电材料如金刚石,AlN,氧化铝,氧化铍,Taconic CER-10和Arlon AR 1000的厚度,基片电阻率和天线对的分离对传输增益的影响。结果表明,对于低电导率但高热导率的高介电材料,在实际的互连系统中,传输增益会增加。

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