RF Rectifier Toward Terahertz Integrated Image Detector

摘要

We present a new CMOS compatible direct conversion terahertz detector operating at room temperature. The rectenna consists of an integrated antenna, realized on the surface of the integrated circuit and connected to a nanometric metallic whisker at one of its edges. The whisker reaches the semiconductor substrate that constitutes the antenna ground plane. The rectifying device can be obtained introducing some simple modifications of the charge storage well in conventional CMOS APS devices, making the proposed solution easy to integrate with existing imaging systems. No need of scaling toward very scaled and costly technological node is required, since the CMOS only provides the necessary integrated readout electronics. On-wafer measurements of RF characteristics of the designed rectifying junction are reported and discussed.