A proposed lateral DDR IMPATT structure for better millimeter-wave optical interaction

摘要

In this paper the authors have proposed a lateral double drift region (DDR) IMPATT structure which can be fabricated in standard complementary metal semiconductor oxide (CMOS) technology. Possible fabrication steps of p+pnn+ structured lateral IMPATT designed to operate at 94 GHz window frequency are described in standard 0.18 μm CMOS technology. A double-iterative computer method based on drift-diffusion model is used to study the high frequency properties of the designed lateral IMPATT device. The proposed structure provides better feasibility of optical control of RF performance of the device.