Fabrication and Characterization of PLD Deposited Crystalline Zno as Channel and Amorphous Zno as Gate Dielectric of the Thin Film FET

摘要

The pulsed laser deposited crystalline and amorphous zinc oxide thin-films for field effect transistor (FET) were investigated. The deposited layers of channel and gate dielectric are formed with significant uniformity and better stoichiometry with PLD. The thin-film sample annealed at 400°C, becomes crystalline, which is used for the channel and the as-deposited amorphous sample used as a gate dielectric layer in MOSFET. The material compositional, structural and surface morphological studies were carried out using X-Ray Diffraction and Atomic Force Microscopy respectively. The complex impedance analysis of fabricated FET was analyzed between source to gate and source to drain. The Current - Voltage (I-V) transfer and output characteristics of fabricated FET was analyzed using National Instruments PXI-4100.