Performance analysis of a designed 635nm compressively strained red laser under variant temperature condition

摘要

In this work, the effects of temperature on the output power and modulation response of a designed 635nm Red Laser have been theoretically determined. At 300K, for a Ga0.48In0.52P/(Al0.36Ga0.64)0.52In0.48P compressively strained MQW Red Diode Laser, the maximum steady state output power has been found out as 105.9mW at an injection current of 90mA, with a threshold current as low as 8.8mA. Furthermore, increase in temperature reveals a red shift of power vs. wavelength characteristics and intensity fluctuation with a peak intensity at 639.8nm at 330K temperature, decrease in overall output power, increase in threshold current and a maximum ??3dB modulation bandwidth of 18.3 GHz at a temperature of 300K.