Gallium selenide (GaSe)-molybdenum disulfide (MOS2) van der Waals heterojunction diodes

摘要

van der Waals (vdW) heterostructures enabled by two-dimensional (2D) semimetals and semiconductors [1] have shown interesting attractions and great promises toward realizing future-generation high performance electronic and optoelectronic devices. In this study, we demonstrate gallium selenide (GaSe) (p-type) /molybdenum disulfide (MoS) (n-type) heterojunction. This heterojunction shows p-n junction diode behavior with good rectification ratio of ~10 at zero gate voltage. In addition, it shows gate tunable behavior with n-type characteristics. Furthermore, we characterize photoresponse of the device under 532 nm laser illumination and obtain photoresponsivity of ~71 mA/W.