Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in OFF current

摘要

We propose heterojunction intra-band tunnel (HIBT) FETs with reduced sensitivity of OFF current (IOFF) to parameter variations (PV) and lower drain-induced barrier lowering/thinning (DIBL/T) compared to Si double gate (DG) MOSFETs. We evaluate the impact of low IOFF variations in HIBT FETs on SRAM leakage and stability and show their potential for low power applications.