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A fast simulation framework for full-chip thermo-mechanical stress and reliability analysis of through-silicon-via based 3D ICs

机译:一种快速仿真框架,具有基于硅的3D IC的全芯片热机械应力和可靠性分析

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In this work, we propose an efficient and accurate full-chip thermo-mechanical stress and reliability analysis framework. To the best of our knowledge this is the first such system which enables full-chip stress simulation as compared to existing commercial Finite Element Analysis (FEA) tools which can only simulate very small cross-sections at a time. Our approach is based on the linear superposition principle of stress tensors and the assumption that the stress field around a cylindrical TSV structure is symmetrically distributed. We compare the accuracy and run time of our simulation tool against the commercial FEA tool based on the number of TSVs under consideration. Our experimental results include stress maps produced by varying several parameters such as TSV liner material, size of the TSV landing pads and TSV dimensions. Finally, we also demonstrate our experimental results by simulating a full chip layout and varying the above parameters as well as by varying the chip operating temperature distribution.
机译:在这项工作中,我们提出了一种高效准确的全芯片热机械应力和可靠性分析框架。据我们所知,这是第一个这样的系统,它可以相比,与现有的商业有限元分析(FEA)工具相比,可以仅在一次模拟非常小的横截面的工具相比。我们的方法基于应力张量的线性叠加原理以及圆柱形TSV结构周围的应力场的假设是对称分布的。我们基于所考虑的TSV的数量,比较我们的模拟工具的准确性和运行时间对商业FEA工具。我们的实验结果包括通过改变几种参数,例如TSV衬垫材料,TSV着陆垫和TSV尺寸的尺寸来产生的应力图。最后,我们还通过模拟全芯片布局并改变上述参数以及改变芯片操作温度分布来展示我们的实验结果。

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