Novel FDSOI band-modulation device: Z2-FET with Dual Ground Planes

摘要

A novel sharp switching Z2-FET DGP device (Zero Impact Ionization and Zero Subthreshold Slope FET with Dual Ground Planes) relying on band modulation mechanism is presented in this paper. The device is fabricated in the most advanced FDSOI (Fully Depleted SOI) technology with Ultra-Thin Body and Buried Oxide (UTBB). The Z2-FET DGP is an upgraded version of Z2-FET. It features sharp on-switch, adjustable triggering voltage (Vt1), and wide hysteresis useful for 1T-DRAM memory.