Boosting InAs TFET on-current above 1 mA/#x03BC;m with no leakage penalty

摘要

In this work, an InAs Tunnel Field-Effect-Transistor (TFET) is carefully optimized by TCAD simulations. The device is able to provide on-state currents in the mA/μm range at a reduced supply voltage of 0.5 V, while keeping the off-state currents below the ITRS specs for HP and LOP devices. Next, the designed TFET is benchmarked with respect to the ITRS specs for advanced multi-gate transistors projected to year 2020.