Terahertz detectors based on a gated two-dimensional electron plasma in CdMnTe/CdMgTe quantum wells

摘要

Fabrication of compact detectors and emitters is essential for development of THz technology. Field-effect transistors (FETs) are promising current- and voltage-driven suitable for this purpose. We report on a THz detection with FETs fabricated on a CdMnTe/CdMgTe quantum well. Both resonant and non-resonant detection in magnetic fields and at low temperatures is demonstrated with a possibility to switch-off the resonant detection with a gate voltage.