Optical and THz Characterization of p-In{sub}0.64Al{sub}0.36Sb for Antenna Application

摘要

Time-resolved photoreflectance was performed simultaneously with THz radiation measurements in a series of p-doped InAl{sub}0.36Sb. Carrier decay time can be as short as 350fs depending on the doping density, which showed correlation with THz emission features.