The electric field effects on spin polarized transport in FM/NMS structure

摘要

In this article, we have solved spin-dependent drift-diffusion equations analytically by considering a spin selective barrier between the magnet and semiconductor in degenerate regime. We have studied the electric field effects on spin polarized transport in FM/NMS structure by using interaction approximation. We have shown by increasing the conductivity of semiconductor up to ferromagnetic conductivity, semiconductor effect resistance become smaller and the spin injection efficiency will be increased. Also, electric field enhances spin polarization density. For injection structures with interfacial barriers, the electric field further enhances spinpolarization considerably.