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Design, Modelling and Simulation of a Fifth Order Low-Pass Gm-C Filter

机译:第五顺序低通GM-C滤波器的设计,建模和仿真

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The paper presents CMOS circuits for integrated analog filters at very high frequencies, based on transconductance integrators. The design of a higher order low-pass filter taking into account the types of approximations: Chebyshev and Butterworth, was made. The performances of the filters designed were demonstrated by implementing them using the biquads cascade synthesis method and the stare variable synthesis method. Starting either from the low-pass normalized poles, when using the cascading synthesis method, either from passive low-pass prototype normalized, when using the state variable synthesis method. The design of the transconductance cell has been done both at the model level and with transistors. All circuits have been simulated in order to prove the correct operation when implemented in a modern CMOS fabrication technology. As a technical contribution, can be noted the implementation and dimensioning of the main circuits, such as the polarization circuit, the operational amplifiers, the transconductance amplifier with active degeneration, applying improvements to the structure presented, checking the performance parameters and comparing the results.
机译:本文基于跨导集成器,在非常高的频率下为集成模拟滤波器提供CMOS电路。考虑到近似的类型的低级低通滤波器的设计:制作了Chebyshev和Butterworth。通过使用各替代级联合成方法和凝结可变合成方法实现它们来证明设计的过滤器的性能。从低通归一极化杆开始,当使用级联合成方法时,在使用状态可变合成方法时,无源低通原型。跨导电池的设计已经在模型水平和晶体管处完成。已经模拟了所有电路,以便在现代CMOS制造技术中实现时证明正确的操作。作为一种技术贡献,可以注意到主电路的实施和尺寸,例如偏振电路,操作放大器,跨导放大器具有有源变性的跨导放大器,对所呈现的结构进行改进,检查性能参数并进行比较结果。

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