Analysis of the self-heating effect in UTBOX devices

摘要

This work presents a study of the self-heating effect (SHE) on -n type UTBOX devices. Thinner buried oxide indicated a reduction on degradation caused by the SH phenomenon as shown by drain current and transient time. Addressed to that, a smaller output conductance variation with the frequency was also related where a higher frequency is required for the SHE emergence. The ground plane region was also considered on the UTBOX devices indicating to be favorable in suppress the SHE.