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Carbon Nanocones on (a-C:H)Si Composite Films: Electronic Properties and Thermal Stability

机译:(A-C:H)Si复合薄膜上的碳纳米:电子性能和热稳定性

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Recently we reported on a new effect of Scanning Probe Microscopy (SPM) -based nanostructuring, namely the electric field-assisted growth of nanocones on (a-C:H):Si composite films under ambient conditions [1, 2]. The SPM process was found to be highly reproducible, thus realizing controlled patterning of the nanocone arrays. The developed film transformations were referred to a lowered content of hydrogen, carbonization and appearance of sp{sup}3-bonded carbon clusters inside the modified region. The objectives of this work are to study two principal aspects of the observed phenomenon such as variations of electronic properties during the film nanostructuring and deviations of the nanocone shape under heat treatment. Of great interest is also the influence of ambient humidity on the nanocone growth.
机译:最近,我们报道了基于扫描探针显微镜(SPM)的新效果,即纳米型纳米型(A-C:H)的电场辅助生长:环境条件下的Si复合膜[1,2]。发现SPM过程是高度可再现的,从而实现纳米氧化物阵列的控制图案化。发育的薄膜转化被称为改性区域内的Sp {sup} 3键合碳簇的氢气,碳化和外观的降低含量。本作作品的目的是研究观察到的现象的两个主要方面,例如在膜纳米结构期间的电子性质的变化和纳米核苷酸在热处理下的偏差。非常兴趣的是环境湿度对纳米核苷酸生长的影响。

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