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Influence of Emitter Temperature and Ionization Potentials of Emitter Atoms on Charge of Evaporated Ions

机译:发射极温度和辐射原子电离电位对蒸发离子电荷的影响

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The influence of emitter temperature and ionization potentials of emitter atoms on the process of field evaporation was studied by means of time-of flight atom probe and field emission microscopy. Ni was select for the experiments of the investigation of the influence of emitter temperature T on charge of evaporated ions. This material is enough good studied by field emission methods. For the study of the influence of ionization potentials on the evaporation process alloy NiCr (20% Cr, 80% Ni) and carbide W were selected. The alloys NiCr contain the components with the values of ionization potentials I{sub}n, which negligible differ from each other (I{sub}1 = 7.63 eV for Ni and I{sub}1 = 6.76 eV for Cr). In the case of carbide W the values I{sub}n of W and C atoms have marked difference (I{sub}1 = 8.67 eV for W and I{sub}1 = 11.36 eV). The mass-spectrums were obtained at various emitter temperatures T from 80 K to the temperatures near to melting point. The increase of the emitter T does not influence upon charge of evaporated ions. At constant evaporation field F{sub}(ev) Ni was evaporated as Ni{sup}+2 at the any T from 80 K to 1000 K. The small decrease F{sub}(ev) at room T leads to appearance of the small peak of single charged ions Ni{sup}+, at the T = 1200 K and remarkable decrease F{sub}(ev) only large peak Ni{sup}+ is observed. Consequently a reduction of ion charge occurs in consequence of corresponding to reductions of value evaporation field F{sub}(ev) necessary as a rule at increase T. If a value of evaporation field is not changed, is not changed and charge of the ions under any change the temperature. In the event of field evaporation at high T and comparatively low F{sub}(ev) energy of activation of evaporation Q{sub}n is not a zero and using the known expressions for determination F{sub}(ev) illegitimate. The new method of estimation of values F{sub}(ev) is offered. The method is founded on calculation of values Q{sub}n and determinations a cross point of graphs Q{sub}n = f(F) for ions of different charges of different elements.
机译:通过飞行时间原子探针和场发射显微镜研究了发射极原子对发射器原子的电离电位对场蒸发过程的影响。选择用于研究发射极温度T对蒸发离子的影响的实验。该材料通过现场排放方法研究了足够的良好。为了研究离子化电位对蒸发过程合金NiCR(20%Cr,80%Ni)和碳化物W的影响。合金NICR包含具有电离电位值I {Sub} N的组件,其彼此忽略不计(I {Sub} 1 = 7.63eV for Ni和I {Sub} 1 = 6.76eV for CR)。在碳化物w的情况下,W和C原子的值I {sub} n具有标记的差异(i {sub} 1 = 8.67eV,并且i {sub} 1 = 11.36eV​​)。在各种发射极温度下在80k至熔点附近的温度下获得质谱。发射器T的增加不会影响蒸发离子的电荷。在恒定蒸发场上,在任何T到80k至1000k的任何T处的Ni {sup} +2蒸发F {sub}(EV)Ni。室内T的小减少F {Sub}(EV)导致外观单个带电离子的小峰值Ni {sup} +,在t = 1200k和显着的减小f {sub}(ev)中,只观察到大峰值ni {sup} +。因此,由于对应于升高T的规则,相应的减少离子电荷的降低,结果是对应于减少所需的价值蒸发字段F {sub}(EV)。如果没有改变蒸发字段的值,则不会改变和充电离子在任何改变温度下。如果在高T且相对低的F {sub}(EV)激活的能量的情况下,蒸发Q {sub} n不是零并且使用已知表达式用于确定f {sub}(ev)籍。提供了值f {sub}(ev)的新方法。该方法建立在计算值Q {Sub} n的计算上,并确定图形Q {sub} n = f(f)的不同元件的不同电荷的离子。

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