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Arrays of micro Penning-Malmberg traps: AN approach to fabricate very high aspect ratios

机译:微孔阵列陷阱:一种制造非常高纵横比的方法

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This paper reports on the progress of fabrication of very high aspect ratio (1000:1) micro-Penning-Malmberg trap arrays designed to store antimatter. The structure consists of thousands of 100μm diameter tubes etched by deep reactive ion etching through Si wafers. Cycles of thermal oxidation and wet etching in buffered oxide etch (BOE) minimized the sidewalls roughness and ensured a complete coating during gold sputtering. The wafers were then aligned and stacked in order to create the microtubes. Uniform plating with mean roughness of Ra=600nm was achieved by tuning the electroplating parameters.
机译:本文报告了非常高纵横比的制造进展(1000:1)旨在存储反物质的微孔 - Malmberg陷阱阵列。该结构由通过Si晶片的深反应离子蚀刻蚀刻成千上万的100μm直径管。缓冲氧化物蚀刻(BOE)中的热氧化和湿法蚀刻的循环最小化侧壁粗糙度,并确保在金溅射期间完全涂层。然后将晶片对齐和堆叠以形成微管。通过调谐电镀参数,实现了具有平均粗糙度的均匀镀层。

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