Reseach of terahertz Narrow-wall 3dB coupler on silicon-substrate

摘要

In this paper, a THz-band Narrow-wall 3dB coupler is designed. The 3dB coupler works in 490–510 GHz, The simulation results show that the VSWR is lower than 1.12 in the working-band. The isolation of the two input ports and two output ports is lower than −25dB, the 3dB coupler obtain slow insertion loss, the phase difference among the two output ports is 90°. Micro-electro-mechanical systems(MEMS) technology is an option for fabricating THz devices for its high fabrication precision and capability of batch production.