Flexible organic non-volatile memory with long retention

摘要

This talk presents highly flexible organic non-volatile memory devices that can be programmed at a reasonably low voltage yet exhibit long retention. With tunneling-limited polymeric dielectric layers prepared by initiated chemical vapor deposition (iCVD) techniques, we carefully engineer tunneling and blocking dielectric layers (TDL and BDL) so that charges can tunnel exclusively through TDL during both programming and erasing operations while being retained within floating gate without leakage in the other cases. With the proposed approach, we demonstrate non-volatile memories that can be fold down to the bending radius as small as 0.2 mm.