A simple pixel structure to compensate non-uniform threshold voltage and mobility of Poly-Si TFTs for large-size AMOLED displays

摘要

A simple pixel structure for large-size and high-resolution active matrix organic light-emitting diode (AMOLED) displays using poly-crystalline silicon (Poly-Si) thin film transistor (TFT) backplane is proposed. The proposed pixel structure can compensate threshold voltage and mobility variations of TFTs. The simulated emission current error range of the proposed pixel structure is from −2.57 LSB to 2.25 LSB when threshold voltage and mobility variations of driving TFT are ±0.5 V and ±10%, respectively. It is expected that the proposed pixel structure will be an effective solution for threshold voltage and mobility variations problem of poly-si TFTs in AMOLED displays.