Analysis of advanced materials based on measured thermal transients of insulated gate devices in broad temperature ranges

摘要

Thermal testing of devices built on advanced compound semiconductors (GaN, SiC) is a challenge, traditional techniques provide poor results. These devices manifest temperature dependent and time variant operation, supposedly caused by capture of charge carriers on traps in the material and their later emission. The paper presents that valid test methods can be found using a systematic scan on powering and sensing parameters. We prove that electric parameters of the devices can be mapped to temperature based on their physics; also over a temperature range where linearity cannot be assumed. The soundness of the technique can be verified by good fit of calibrated and normalized transients at different power.