首页> 外文会议>International Conference on Simulation of Semiconductor Processes and Devices >SPICE-Compatible Macro Model for Split-Gate Compact NVM Cell with Various Gap Sizes
【24h】

SPICE-Compatible Macro Model for Split-Gate Compact NVM Cell with Various Gap Sizes

机译:具有各种间隙尺寸的分层压缩NVM单元的香料兼容宏模型

获取原文

摘要

In this paper we present a SPICE-compatible macro model based on three MOS transistors to describe split-gate non-volatile memory (NVM) cell characteristics for various sizes of the gap between the gates. The model has initially been developed based on simulated dc-IV-characteristics of reference cells (floating gate connected to control gate) and was verified later with measurements on reference as well as real floating gate cells.
机译:在本文中,我们提出了一种基于三个MOS晶体管的香料兼容的宏模型,以描述栅极之间的各种尺寸的分裂栅极非易失性存储器(NVM)单元特性。 最初是基于参考电池的模拟DC-IV特性开发的模型(浮动栅极连接到控制栅极),并且稍后被验证,并且测量参考以及真实的浮栅电池。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号