Impact of mechanical strain on the charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed laser irradiation

摘要

We investigate the impact of performance boosters using mechanical stress on the Single-Event Transient (SET) response of nanometer scaled Fully-Depleted Silicon-On-Insulator (SOI) devices. Heavy ion-induced charge collection mechanisms are analyzed through the measurement of fast transients on dedicated test structures processed either on standard relaxed or bi-axially tensile strained SOI substrates.