Proton, electron and heavy ion single event effects on the HAS2 CMOS Image Sensor

机译：质子，电子和重离子单事件对HAS2 CMOS图像传感器的影响

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The Single Event Effects sensitivity of the HAS2 CMOS Image Sensor has been characterized with protons, electrons and heavy ions. Effects in the photosensitive area and in the readout integrated circuit have been studied.

机译：HAS2 CMOS图像传感器的单事件效应灵敏度已通过质子，电子和重离子进行了表征。已经研究了光敏区域和读出集成电路中的影响。

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《European Conference on Radiation and Its Effects on Components and Systems》|2013年|1-8|共8页
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Beaumel Matthieu; Herve Dominique; Van Aken Dirk; Pourrouquet Pierre; Poizat Marc;
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Arrays; Protons; Radiation effects; Shift registers; Single event upsets; CMOS Image Sensors; Radiation;

机译：阵列;质子;辐射效应;移位寄存器;单事件翻转; CMOS图像传感器;辐射;

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专利

1. Proton, Electron, and Heavy Ion Single Event Effects on the HAS2 CMOS Image Sensor [J] . Beaumel M., Herve D., Van Aken D., Nuclear Science, IEEE Transactions on . 2014,第4期

机译：质子，电子和重离子单事件对HAS2 CMOS图像传感器的影响
2. Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter [J] . He Anlin, Guo Gang, Shi Shuting, Journal of Semiconductors . 2015,第11期

机译：Bi-CMOS技术DC / DC转换器中重离子和质子诱导的单事件效应的实验研究
3. Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors [J] . Virmontois C., Toulemont A., Rolland G., Nuclear Science, IEEE Transactions on . 2014,第6期

机译：数字CMOS图像传感器中的辐射诱导剂量和单事件效应
4. Proton, electron and heavy ion single event effects on the HAS2 CMOS Image Sensor [C] . Beaumel Matthieu, Herve Dominique, Van Aken Dirk, European Conference on Radiation and Its Effects on Components and Systems . 2013

机译：质子，电子和重离子对HAS2 CMOS图像传感器的效果
5. Heavy ion radiation effects on CMOS image sensors. [D] . Mebrahtu, Henok T. 2006

机译：重离子辐射会对CMOS图像传感器产生影响。
6. Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects [O] . Yuanyuan Xue, Zujun Wang, Wei Chen, 2017

机译：质子辐射对PPD CMOS图像传感器暗信号分布的影响：TID和DDD效应
7. Single event effects in 0.18 μm CMOS image sensors [O] . Rushton Joseph E., Stefanov Konstantin D., Holland Andrew D., 2016

机译：0.18μmCmOs图像传感器中的单一事件效应
8. SEU (Single Event Upset) Test Techniques for 256k Statics RAMs (Random Access Memories) and Comparisons of Upsets Induced by Heavy Ions and Protons [R] . Koga, R., Kolasinski, W. A., Osborn, J. V., 1988

机译：用于256k静态Ram（随机存取存储器）的sEU（单事件翻转）测试技术以及重离子和质子引起的扰乱的比较

Proton, electron and heavy ion single event effects on the HAS2 CMOS Image Sensor

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