Identifying NBTI-Critical Paths in Nanoscale Logic

摘要

One of the main reliability concerns in the nanoscale logic is the time-dependent variation caused by Negative Bias Temperature Instability (NBTI). It may increase the switching threshold voltage of pMOS transistors and as a result slow down signal propagation along the paths between flip-flops thus causing functional failures in the circuit. In this paper we propose an approach to identify NBTI-critical paths in nanoscale logic that is based on analyzing combination in different degrees of the three parameters: delay-critical paths, gate input signal probability and the gate fan-out degree along the paths. Further the identified NBTI-critical path can be used e.g. for introduction of aging sensors circuitry, rejuvenation stimuli generation, etc. The proposed approach is demonstrated on an industrial ALU circuit design.