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Ultra Low-Power Computation via Graphene-Based Adiabatic Logic Gates

机译:超低功耗通过基于石墨烯的绝热逻辑栅极计算

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As an answer to the difficulties in improving the figures of merit of deeply-scaled CMOS devices, researchers have looked at alternative materials and technologies for implementing new devices that can overcome the limitations of CMOS. Graphene has emerged as one of the most promising candidates among these new materials, recent works have demonstrated the implementation of electrostatically-controlled p-n junctions that can serve as the basic primitive for a new class of compact, fast and energy-efficient graphene-based logic gates. In this work we revisit those gates from a different perspective, namely, as devices that can operate adiabatically, that is, that are able to reuse the dissipated energy [1]. We show how to build the basic logic gates by appropriately interconnecting graphene based p-n junctions and characterize those adiabatic gates for power and performance. The comparison between these adiabatic gates and both adiabatic CMOS and their non-adiabatic graphene-based counterpart shows that the former can operate with 2X to 3X less average power, and about 4X better power-delay product.
机译:作为提高深度缩放的CMOS设备的优点的难度的答案,研究人员研究了实现可以克服CMOS局限性的新设备的替代材料和技术。 Graphene已成为这些新材料中最有前途的候选人之一,最近的作品已经证明了静电控制的PN连接点,可以作为新类紧凑,快速和节能石墨烯的基础基本原子的基本原态盖茨。在这项工作中,我们从不同的角度重新审视那些盖茨,即,作为能够绝热运行的设备,即能够重用消散的能量[1]。我们展示了如何通过适当地互连基于石墨烯的P-N结来构建基本逻辑门,并表征这些绝热门进行功率和性能。这些绝热门和绝热CMO和基于非绝热石墨烯的对应物之间的比较表明,前者可以以2倍至3倍的平均功率操作,以及大约4x更好的功率延迟产品。

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