ADVANCES IN LOW ENERGY X-RAY AND EDS ANALYSIS WITH STATE OF THE ART SILICON DRIFT DETECTORS

摘要

Microanalysis of ever smaller structures at bulk samples requires low electron beam energy to enhance spatial resolution, and therefore also use of low energy X-ray lines for elemental analysis. To separate significant overlapping peaks e.g., N-K (392 eV) and Ti-L1 (395 eV), the incorporation of line deconvolution algorithms in EDS software is important. We describe features at the sub-micrometre scale analyzed using silicon drift detector (SDD) with 10 and 30 mm~2 in conventional geometries. In addition, an annular four channel SDD was used. It is placed between the pole piece and sample, covering a very large solid angle of 1.1 sr, rapidly acquiring sufficient data with a high take-off angle from four different directions.