Field mapping of semiconductor devices in a transmission electron microscope with nanometre scale resolution by off-axis electron holography and precession electron diffraction

摘要

It is necessary to understand the distribution of the electrostatic potentials and strain fields in semiconductor devices in order to improve their performance. In this paper we will present results showing active dopant mapping that have been obtained on state-of-the-art devices obtained by off-axis electron holography. We will also present a range of different techniques that can be used to map the strain in these devices with nm-scale resolution.