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Fabrication and operation of microplasma reactor array for maskless nanoscale material etching

机译:用于无掩模纳米级材料刻蚀的微等离子体反应器阵列的制备和操作

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This paper reports a novel maskless nanoscale material etching method based on microplasma reactor array with advantages of high etching efficiency, high fidelity, simple-structure, and flexible to etching various material. A 2×2 inverted pyramidal microplasma reactor array with each cavity dimension of 50μm was successfully fabricated by MEMS process. Experiment results showed that the devices could operate in rare gas Ar under dc excitation. V-I characteristics of the microplasma reactor array at 10kpa of Ar with different ballast resistances were presented. The work in this paper may lay a good foundation for maskless nanoscale material etching.
机译:本文报道了一种基于微等离子体反应器阵列的新型无掩模纳米材料刻蚀方法,该方法具有刻蚀效率高,保真度高,结构简单,可刻蚀各种材料的优点。通过MEMS工艺成功地制造了每个腔尺寸为50μm的2×2倒金字塔形微等离子体反应器阵列。实验结果表明,该器件可以在直流激励下在稀有气体Ar中工作。提出了在10kpa的Ar下具有不同压载电阻的微等离子体反应器阵列的V-I特性。本文的工作可能为无掩模纳米级材料蚀刻奠定良好的基础。

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