Compact modelling for Co/BTO/LSMO Ferroelectric Tunnel Junction

摘要

Ferroelectric Tunnel Junction (FTJ) is able to store non-volatile data in the spontaneous polarization direction of ferroelectric tunnel barrier. Recent progress have demonstrated its great potential to build up the next generation Non-volatile Memory and Logic (NVM and NVL) thanks to the high OFF/ON resistance ratio, fast operation speed, low write power, non-destructive readout and so on. In this paper, we present the first compact model for Co/BTO/LSMO FTJ nanopillar, which was reported experimentally to exhibit excellent NVM performance. This model integrates related physical models of tunnel resistance, static coercive voltage and dynamic switching delay. Its accuracy is shown by the good agreement between numerical model simulation and experimental measurements. This compact model has been developed in Verilog-A language and implemented on Cadence Virtuoso Platform. Simulations validated the static and dynamic behaviors of this model, indicating that it can be efficiently used for the analysis and design of hybrid FTJ/CMOS circuits.