Simulation of high frequency structure for Extended Interaction Oscillator

摘要

For the researches of Extended Interaction Oscillator (EIO) with frequency exceed 300GHz, the parameters of high frequency structure are optimum with a help of CST studio. The parameters including width of waveguide, the length of waveguide, the height of waveguide, the number of periodic structure, the radius of electron beam tunnel and the thickness of metal between nearby waveguide are studied. The results show that the out signal with a band 10GHz are obtained at the optimum parameters.