A comprehensive study of nanoscale Field Effect Diodes

摘要

The performance of nanoscale Field Effect Diode as a function of the doping concentration and the gate voltage is investigated. Our numerical results show that the Ion/Ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 as the doping concentration of source/drain regions increased from 1016 to 1021cm−3. The figures of merit including intrinsic gate delay time and energy-delay product have been studied for the field effect diodes which are interesting candidates for future logic application.