Comprehensive Understanding of Negative Capacitance FET From the Perspective of Transient Ferroelectric Model

摘要

Negative capacitance FET (NCFET) is one of the most promising steep-subthreshold slope (SS) transistors. Thanks to the discovery of ferroelectric HfO₂ (FE-HfO₂), NCFET has been getting more attentions as a highly manufacturable solution. Since the proposal of NCFET and discovery of FE-HfO2, there have been many experimental demonstrations of steep SS with NCFET. However, the physical mechanism of steep SS has not been fully understood yet, and confident explanations have not been given to these experimental results. In this paper, we report our recent progress of theoretical and experimental studies toward comprehensive understanding of NCFET regarding steep SS behavior, reverse DIBL and negative differential resistance (NDR). Transient NC theory that we explore is able to consistently explain some class of previously reported experimental results. This paper will help to guide further NCFET research activities.