High efficiency wavelength conversion of 40 Gbps signals at 1550 nm in SOI nano-rib waveguides using p-i-n diodes

摘要

We demonstrate enhancement of FWM wavelength conversion of a 40 Gbps signal in a reverse-biased p-i-n junction silicon waveguide. A conversion efficiency of −4.6 dB enables a conversion power penalty as low as 0.2 dB.