A Novel Direct Gate Driver for Series-connected SiC MOSFETs

摘要

In order to solve the problem of light weight of traction converter and auxiliary converter in rail transit, wide-gap semiconductor devices such as SiC devices are more and more used. SiC material has the characteristics of wide band gap, high breakdown field strength, fast electron saturation drift rate, etc., which can meet the application requirements under medium power, high temperature and high frequency strip. However, the current commercial SiC devices only have 1.7kV, which is difficult to meet the demanding requirements of the rail transit field. In this paper, a new direct SiC MOSFETs series method is proposed, and the package technology is adopted to manufacture the 3.3kv power module used in the field of rail transit. The proposed gate drive circuit is verified by both simulation and experiments. SiC MOSFET module with series-connected bare die devices and matched driver board will be made in next step to decrease stray parameters and increase the power density.