Static and dynamic characteristics of self-assembled InAs-GaAs quantum dot laser considering carrier recombination and carrier escape time by using circuit-level modeling

摘要

Considering the excited state and the standard rate equations, this study provides a new circuit model for selfassembled quantum dot laser made by InGaAs/GaAs and investigates the performances of this kind of laser. The carrier dynamic effects on static and dynamic performances of selfassembled laser (QD) have been analyzed. We also show that quantum-dot lasers are quite sensitive to the crystal quality outside as well as inside quantum dots.