A simple compact model for the junctionless Variable Barrier Transistor (VBT)

摘要

In this paper we present a simple compact model for the computation of the drain current in a new type of transistor, a junctionless VBT (Variable Barrier Transistor).A good agreement between our results and two TCAD simulation tools (COMSOL and ATLAS), proves the accuracy of this model. It is the first time that a compact drain current model is derived for this type of transistor.