Alumina (Al2O3) thin films have been deposited on silicon substrates by atomic layer deposition at 200°C using TMA as Al precursor and H2O or O3 as oxygen precursor. The growth rate has been found to be lower for ozone-based processes as compared to H2O. The electrical characterization of the deposited layers has shown that when using O3 the films exhibit larger defect densities as compared to those grown using H2O, although these show larger trapping. A post deposition anneal process at 650°C has been shown to lower the defect densities, being this annealing more efficient for O3-grown layers. The effect of post-metallization annealing in forming gas is also investigated.
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