Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures

摘要

SrTiO3-based MIM capacitors were electrically characterized. Strontium titanate thin films were grown by atomic layer deposition using Sr(iPr3Cp)2 and (CpMe5)Ti(OMe)3 as strontium and titanium precursors and H2O and O3 as oxygen precursors. The temperatures used to grow the high-k films were 250 and 300 °C. The films were amorphous in the as-deposited state. The lowest CET values were achieved in the films grown using ozone at 300 °C. Leakage current is lower when samples were grown at 250 °C and when were grown using O3 as oxygen precursor.