Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs

摘要

In this work, by means of Monte Carlo simulations, the static and dynamic performance of InAs/AlSb HEMTs at low drain voltages is analyzed. A very good agreement between experimental and simulation results has been obtained not only for the static behavior, but also for small signal equivalent circuit parameters like Cgs, Cgd, ft and fc. Problems arise when trying to reproduce the values of gd and Cds due to the experimental frequency dispersion, leading also to discrepancies in the values obtained for the intrinsic gm and also fmax.