Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic field effects

摘要

Efficient electrical spin injection into semiconductor based devices at room temperature is one of the most important requirements for the development of applicable spintronic devices in the near future and is thus an important and very active research field. Here we report experimental results for the electrical spin injection in spin light-emitting diodes (spin-LEDs) without external magnetic fields at room temperature. Our devices consist of a Fe/Tb multilayer spin injector with remanent out-of-plane magnetization, an MgO tunnel barrier for efficient spin injection and an InAs quantum dot light-emitting diode. Using a series of samples with different injection path lengths allows us to experimentally determine the spin relaxation during vertical transport from the spin injector to the active region at room temperature. In combination with oiir concept for remanent spin injection, we are additionally able to investigate the influence of an external magnetic field on the spin relaxation process during transport. While the spin relaxation length at room temperature without external magnetic field is determined to be 27 nm, this value almost doubles if an external magnetic field of 2 Tesla is applied in Faraday geometry. This demonstrates that the results for spin injection and spin relaxation obtained with or without magnetic field can hardly be compared. The efficiency of spin-induced effects is overestimated as long as magnetic fields are involved. Since strong magnetic fields are not acceptable in application settings, this may lead to wrong conclusions and potentially impairs proper device development.