A High-Efficiency GaN-based Transmitter for Wireless Power Transfer System

摘要

Wireless power transmission has become more and more popular these years. Since the system volume is strongly related with the resonant frequency, a high-frequency high-efficiency transmitter is required. In this paper, a high efficiency transmitter based on GaN high electron mobility transistors (HEMTs) for wireless power transfer system is presented. In order to solve the crosstalk problem during highspeed switching, an active miller clamp driver circuit is proposed. A 320 V/5 kW, GaN-based prototype has been build and tested. Experimental results demonstrate the effectiveness of this circuit.